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? semiconductor components industries, llc, 2012 september, 2012 ? rev. 1 1 publication order number: dta124e/d mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 digital transistors (brt) r1 = 22 k , r2 = 22 k pnp transistors with monolithic bias resistor network this series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. features ? simplifies circuit design ? reduces board space ? reduces component count ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector ? base voltage v cbo 50 vdc collector ? emitter voltage v ceo 50 vdc collector current ? continuous i c 100 madc input forward voltage v in(fwd) 40 vdc input reverse voltage v in(rev) 10 vdc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 see detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sc ? 75 case 463 style 1 marking diagrams xxx = specific device code m = date code* =pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. sc ? 59 case 318d style 1 sot ? 23 case 318 style 6 sc ? 70/sot ? 323 case 419 style 3 sot ? 723 case 631aa style 1 sot ? 1123 case 524aa style 1 xx m 1 1 xxx m xx m 1 xx m 1 x m xx m 1 1 pin connections
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 2 table 1. ordering information device part marking package shipping ? mun2112t1g, SMUN2112T1G 6b sc ? 59 3,000 / tape & reel mmun2112lt1g a6b sot ? 23 3,000 / tape & reel mun5112t1g, smun5112t1g 6b sc ? 70/sot ? 323 3,000 / tape & reel dta124eet1g 6b sc ? 75 3,000 / tape & reel dta124em3t5g 6b sot ? 723 8,000 / tape & reel nsba124ef3t5g y sot ? 1123 8,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. figure 1. derating curve ambient temperature ( c) 125 100 75 50 25 0 ? 25 ? 50 0 50 100 150 200 250 300 p d , power dissipation (mw) 150 (1) (2) (3) (4) (5) (1) sc ? 75 and sc ? 70/sot ? 323; minimum pad (2) sc ? 59; minimum pad (3) sot ? 23; minimum pad (4) sot ? 1123; 100 mm 2 , 1 oz. copper trace (5) sot ? 723; minimum pad
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 3 table 2. thermal characteristics characteristic symbol max unit thermal characteristics (sc ? 59) (mun2112) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 230 338 1.8 2.7 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 540 370 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 264 287 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sot ? 23) (munn2112l) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 246 400 2.0 3.2 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 508 311 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 174 208 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sc ? 70/sot ? 323) (mun5112) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 202 310 1.6 2.5 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 618 403 c/w thermal resistance, (note 1) junction to lead (note 2) r jl 280 332 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sc ? 75) (dta124ee) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 200 300 1.6 2.4 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 600 400 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sot ? 723) (dta124em3) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 260 600 2.0 4.8 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 480 205 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. 3. fr ? 4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr ? 4 @ 500 mm 2 , 1 oz. copper traces, still air.
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 4 table 2. thermal characteristics characteristic unit max symbol thermal characteristics (sot ? 1123) (nsba124ef3) total device dissipation t a = 25 c (note 3) (note 4) derate above 25 c (note 3) (note 4) p d 254 297 2.0 2.4 mw mw/ c thermal resistance, (note 3) junction to ambient (note 4) r ja 493 421 c/w thermal resistance, junction to lead (note 3) r jl 193 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad. 2. fr ? 4 @ 1.0 x 1.0 inch pad. 3. fr ? 4 @ 100 mm 2 , 1 oz. copper traces, still air. 4. fr ? 4 @ 500 mm 2 , 1 oz. copper traces, still air. table 3. electrical characteristics (t a = 25 c, unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 0.2 madc collector ? base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector ? emitter breakdown voltage (note 5) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics dc current gain (note 5) (i c = 5.0 ma, v ce = 10 v) h fe 60 100 ? collector ? emitter saturation voltage (note 5) (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc input voltage (off) (v ce = 5.0 v, i c = 100 a) v i(off) ? 1.2 ? vdc input voltage (on) (v ce = 0.2 v, i c = 5.0 ma) v i(on) ? 2.0 ? vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 15.4 22 28.6 k resistor ratio r 1 /r 2 0.8 1.0 1.2 5. pulsed condition: pulse width = 300 msec, duty cycle 2%.
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 5 typical characteristics mun2112, mmun2112l, mun5112, dta124ee, dta124em3 v in, input voltage (v) i c, collector current (ma) c ob, output capacitance (pf) h fe, dc current gain (normalized) v ce(sat), collector ? emitter voltage (v) t a = ? 25 c figure 2. v ce(sat) vs. i c figure 3. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 t a =75 c figure 4. output capacitance i c , collector current (ma) 010 2030 75 c 100 10 1 0.1 40 50 figure 5. output current vs. input voltage 100 10 1 0.1 0.01 0.001 0 1234 v in , input voltage (v) 25 c 5 6 78910 figure 6. input voltage vs. output current 0.01 0.1 1 10 40 i c , collector current (ma) 020 6080 75 c 25 c t a = ? 25 c 50 010203040 10 3 2 1 0 v r , reverse voltage (v) 25 c v ce = 10 v i c /i b = 10 f = 10 khz l e = 0 a t a = 25 c v o = 5 v 25 c 75 c ? 25 c t a = ? 25 c v o = 0.2 v 4 5 6 7 8 9
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 6 typical characteristics ? nsba124ef3 figure 7. v ce(sat) vs. i c figure 8. dc current gain i c , collector current (ma) i c , collector current (ma) 40 30 20 50 10 0 0.01 0.1 1 100 10 0.1 1 10 100 1000 figure 9. output capacitance figure 10. output current vs. input voltage v r , reverse voltage (v) v in , input voltage (v) 50 40 30 20 10 0 0 1 2 3 4 6 7 10 814 6 4 2 0 0.1 1 10 100 figure 11. input voltage vs. output current i c , collector current (ma) 40 30 50 20 10 0 0.1 1 10 100 v ce(sat) , collector ? emitter voltage (v) h fe , dc current gain c ob , output capacitance (pf) i c , collector current (ma) v in , input voltage (v) i c /i b = 10 150 c ? 55 c 25 c v ce = 10 v 150 c ? 55 c 25 c f = 10 khz i e = 0 a t a = 25 c v o = 5 v 150 c ? 55 c 25 c v o = 0.2 v 150 c ? 55 c 25 c 0.01 5 12 1
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 7 package dimensions sc ? 59 case 318d ? 04 issue h style 1: pin 1. base 2. emitter 3. collector e a1 b a e d 2 3 1 c l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2.4 0.094 0.95 0.037 0.95 0.037 1.0 0.039 0.8 0.031 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 1.00 1.15 1.30 0.039 inches a1 0.01 0.06 0.10 0.001 b 0.35 0.43 0.50 0.014 c 0.09 0.14 0.18 0.003 d 2.70 2.90 3.10 0.106 e 1.30 1.50 1.70 0.051 e 1.70 1.90 2.10 0.067 l 0.20 0.40 0.60 0.008 2.50 2.80 3.00 0.099 0.045 0.051 0.002 0.004 0.017 0.020 0.005 0.007 0.114 0.122 0.059 0.067 0.075 0.083 0.016 0.024 0.110 0.118 nom max h e
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 8 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 6: pin 1. base 2. emitter 3. collector 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 9 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 10 package dimensions sc ? 75/sot ? 416 case 463 issue f style 1: pin 1. base 2. emitter 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ? e ? ? d ? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 11 package dimensions sot ? 723 case 631aa issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36
mun2112, mmun2112l, mun5112, dta124ee, dta124em3, nsba124ef3 http://onsemi.com 12 package dimensions sot ? 1123 case 524aa issue c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. dim min max millimeters a 0.34 0.40 b 0.15 0.28 c 0.07 0.17 d 0.75 0.85 e 0.55 0.65 0.95 1.05 l 0.185 ref h e d e c a ? y ? ? x ? h e *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e b1 0.10 0.20 style 1: pin 1. base 2. emitter 3. collector 1 2 3 0.35 0.40 top view side view 3x bottom view l2 l 3x dimensions: millimeters 1.20 2x 0.26 3x 0.34 package outline b 2x b1 e 0.08 xy l2 0.05 0.15 0.20 0.38 1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intelle ctual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising ou t of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary ove r time. all operating parameters , including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 dta124e/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative

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